Intel 18A node reportedly stuck at 10% yields, SRAM density also trails TSMC upcoming 2nm tech

Intel 18A struggles with yields under 10% and SRAM density lags TSMC's N2 tech.

: Intel's 18A node faces critical challenges with yields under 10% and lower SRAM density than TSMC's N2 node. Yield issues may delay its deployment for key products in 2025. While TSMC's SRAM cells achieve 0.0175 μm², Intel lags at 0.021 μm².

Intel's ambitious 18A process node is encountering severe issues, with yields currently below 10 percent, which is significantly lower than required for commercial production. Compounding these challenges, Intel's SRAM density also falls short compared to TSMC's upcoming N2 technology, affecting the node’s competitiveness.

Although these hurdles present serious implications for Intel's planned 2025 products utilizing the 18A node, there remains time to address them. Achieving significant improvements in yield, potentially raising them above 60 percent, could still make the node viable for Intel's next-gen product releases.

Aside from yield concerns, TSMC's advancements in SRAM density with their N2 node further outpace Intel's current capabilities. TSMC achieves a higher density of bit cells at 0.0175 μm², while Intel's 18A features larger cells at 0.021 μm², matching TSMC's older N3E and N5 nodes.

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