MIT's light-activated antiferromagnetic memory could replace today's ferromagnets

MIT uses lasers to create new magnetic states in FePS₃, transforming memory technology.

: MIT researchers, led by Professor Nuh Gedik, have utilized lasers to create a novel magnetic state in FePS₃, a type of antiferromagnetic material. By tuning terahertz laser pulses to match the material's atomic vibrations, the antiferromagnet transitions to a magnetized state. This breakthrough could lead to memory chips that are denser and more energy-efficient than current technologies. Despite engineering challenges, the study marks a significant step toward advanced data storage.

MIT scientists have pioneered a method to alter the magnetic state of FePS₃, an antiferromagnetic material, using light. Under the leadership of Professor Nuh Gedik, their approach involves cooling the material and exposing it to carefully tuned terahertz laser pulses to introduce a new magnetic state.

Antiferromagnets typically exhibit complex spin patterns with zero net magnetization, a quality favorable for secure data storage but challenging for computational switching. The lasers successfully disrupted this pattern, achieving a magnetized state lasting milliseconds, an impressive duration in quantum terms.

This development holds the promise of creating next-generation memory chips that are both durable and have higher storage density. Although numerous engineering hurdles are yet to be tackled, the research, published in Nature, is a pivotal advance toward leveraging antiferromagnets in future technology.