SK Hynix beats Samsung by launching its 321-layer TLC NAND flash memory first

SK Hynix has become the first company to mass-produce 321-layer triple-level cell NAND flash memory, surpassing Samsung's efforts. This achievement marks a significant advancement in memory technology, as it could lead to higher capacity storage solutions available at more affordable prices. The new 1-terabit 4D NAND chips have also set a record, following closely behind their earlier introduction of a 238-layer NAND.

These densely packed chips could facilitate the production of SSDs with capacities exceeding 100TB, which would be particularly beneficial for AI data centers and other applications requiring energy-efficient storage. SK Hynix's process developments, including the 'Three Plugs' technology, involve connecting three memory layer vertical channels and yield higher efficiency by using low-stress materials and automatic alignment correction.

Production efficiency of these chips has seen a 59 percent increase compared to the previous generation, promising faster data transfers and improved power efficiency. SK Hynix plans to ship the new devices in 2025, while Samsung is already working on a 400-layer NAND expected by 2026. This competition may further drive innovation in the industry, with even denser chips on the horizon.