The new graphene-based flash memory writes data in 400 picoseconds, breaking all speed records

Revolutionary PoX memory writes in 400 picoseconds, setting new speed record.

: Fudan University researchers introduced PoX, a groundbreaking memory device that programs data in an astonishing 400 picoseconds. Utilizing graphene's exceptional properties, PoX leaps ahead of traditional flash memory by effectively leaving speed bottlenecks behind. This leap is transformative for AI, allowing real-time processing of vast datasets with reduced energy demands. Spearheaded by Professor Zhou Peng, this innovation aligns with AI's growing computational needs, promoting efficiency and speed.

Fudan University in Shanghai has developed a cutting-edge flash memory device that is rewriting the standards of data storage speed. Named "PoX," this memory device performs write operations in an unprecedented 400 picoseconds—approximately 400 trillionths of a second. This marks a significant leap from the previous record for similar technologies, which the PoX device surpasses by a striking factor of 100,000, facilitating 25 billion operations per second. Such a feat was achieved using graphene, a two-dimensional material recognized for its remarkable electrical properties. Professor Zhou Peng, part of the leading research group, states that this is a million times more impressive than current USB flash drives that max out at about 1,000 operations in the same time frame.

This breakthrough is particularly transformative for fields such as artificial intelligence, where the speed of processing and accessing data directly impacts computational efficiency and effectiveness. AI models, expanding both in complexity and size, present a growing demand for advanced memory solutions. Traditional volatile memories, like static and dynamic RAM, though fast, lose stored data without power, contrasting with non-volatile memories such as flash storage which are typically slower but retain data even when powered down. By integrating graphene's ballistic transport properties and finely tuning the Gaussian length in the memory channel, researchers developed a high-speed mechanism called "super-injection," resulting in exceptional charge flow speeds into the storage layer, circumventing long-standing non-volatile memory speed issues.

Graphene was specifically chosen due to its unique Dirac band structure, heralding enhanced electrical capabilities. By employing a Dirac band and embracing a super-injection process, Fudan's innovation paves the way for unlocking higher performance in emerging technologies. In practical terms, this advancement is slated to expedite real-time data processing which is pivotal in areas like AI training and inference, which inherently demand quick and efficient memory access to optimize computational results.

PoX not only promises speed but also addresses one of the major inefficiencies in AI hardware—energy demands. Zhou highlights how the swift speed of the PoX device contributes to reducing energy consumption during data transfers. This innovation thus stands to be indispensable in the ongoing quest to develop more sustainable tech solutions, with immense potential applications across various tech sectors, upgrading existing hardware and fostering advancements in machine learning, data processing, and beyond.

The PoX's capabilities serve as a testament to the power of combining cutting-edge materials science with forward-thinking engineering strategies. As PoX progresses towards commercial implementation, it offers a glimpse into the future possibilities where speed and energy efficiency redefine data storage and processing.

Sources: TechSpot, Fudan University, State Key Laboratory of Integrated Chips and Systems

Technology